Unidirectional Nano Film manufacturers take you to understand the main preparation technology of nano film materials
The manufacturer of Unidirectional Nano Film tells you that the nano film material is a new type of material. Due to its special structural characteristics, it has good development prospects as a functional material and a structural material. Today let's take a look at the main preparation technologies of nano-film materials.
1. Ion beam sputtering deposition
Ion beam sputtering deposition to prepare nanometer-scale films is grown on a multifunctional ion beam assisted deposition device. The manufacturer of Unidirectional Nano Film tells you that the background vacuum of this device is 0.02MPa, and the working pressure is 6MPa. The deposited ceramic material can be deposited on the substrate by sputtering the target with 3.0KeV/100mA Ar+ ion beam, while the deposited PTFE material needs to use smaller beam current and beam voltage. The deposition rate was 6nm/min for ceramic materials and 12nm/min for metal and PTFE materials.
2. Magnetron sputtering method
The substrate can be controlled in a very low temperature range by magnetron sputtering to complete the film sputtering process. Magnetron sputtering can not only sputter various alloys and refractory metals, but also sputter insulating films like SiO2. The magnetron sputtering film has very good uniformity and good step coverage. In addition, the sputtering film can be precisely controlled, which is beneficial to the preparation of smaller insulating films. The manufacturer of Unidirectional Nano Film tells you that the SiO2 insulating film prepared by radio frequency magnetron sputtering has the advantages of compact structure and high purity. In the radio frequency sputtering process, it is easy to obtain nanostructured films by using higher sputtering pressure and lower sputtering rate.
3. Molecular Beam Epitaxy
The molecular beam epitaxy preparation method is to place the required epitaxial film materials in the jet unit, and at the same time spray the atoms or molecules of these film material components onto the heated substrate in a specific proportion to epitaxially deposit nano-films. The molecular beam epitaxy preparation method has many characteristics: under ultra-high vacuum conditions, there are very few residual gas impurities, and at the same time, the film surface can be kept clean; Unidirectional Nano Film manufacturers tell you that growing III-V element compound films at low temperatures often Its growth rate is extremely slow, because the nano-film grows in layers, so a film with few surface defects can be obtained. Because it is easy to control the impurity concentration, the components of the device can be observed in situ with a reflective high-energy electron diffraction instrument. Growth of thin-film crystals Situations and preparations can vary dramatically in impurity concentrations.
4. Low energy cluster beam deposition method
Low-energy cluster beam deposition method is a new nano-film preparation technology. Low-energy cluster beam deposition first excites the deposited material into an atomic or molecular state, uses Ar as the carrier gas to form clusters, and uses electron beams to ionize the clusters, and uses a mass spectrometer to separate the clusters, thereby controlling a certain mass, The energy clusters are deposited to form thin films. The Unidirectional Nano Film manufacturer tells you that under normal conditions, the deposited clusters are not broken when they collide with the surface, but are randomly distributed; when the average size of the clusters is large enough, it limits its ability to expand, and the nanometer of the deposited film The structure has a good memory property for the cluster size.